hn7g06fu TOSHIBA Semiconductor CORPORATION, hn7g06fu Datasheet - Page 2

• Manufacturer Part Number: hn7g06fu
• Description: Toshiba Multichip Discrete Device
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Q1 Electrical Characteristics
Q2 Electrical Characteristics
**: h
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Input voltage (ON)
Input voltage (OFF)
Transition frequency
Collector output capacitance
Input resistor
Resistor ratio
Switching time
FE
Classification
Characteristic
Characteristic
Turn-on time
Storage time
Fall time
A:300~600, B:500~1000
(Ta = 25°C)
V
V
(Ta = 25°C)
V
V
CE (sat)(1)
CE (sat)(2)
Symbol
Symbol
V
V
R1/R2
h
BE (sat)
CE (sat)
I
I
I
I
I
I(OFF)
CBO
C
CBO
CEO
h
C
EBO
t
EBO
I(ON)
FE
R1
t
f
stg
f
on
t
FE
T
ob
T
ob
f
**
V
V
V
I
I
I
V
V
f = 1 MHz
V
V
V
V
I
V
V
V
V
0 V
Duty cycle < = 2%
IB1 = −IB2 = −5 mA
C
C
C
C
CB
EB
CE
CE
CB
CB
CE
EB
CE
CE
CE
CE
CB
= −10 mA, I
= −200 mA, I
= −200 mA, I
= 5 mA, I
10 µs
2
= −15 V, I
= −5 V, I
= −2 V, I
= −2 V, I
= −10 V, I
= 50 V, I
= 50 V, I
= 10 V, I
= 5 V, I
= 0.2 V, I
= 5 V, I
= 10 V, I
= 10 V, I
INPUT
Test Condition
Test Condition
B
C
C
C
C
C
C
C
E
E
E
= 0.25 mA
C
= 10 mA
= 0.1 mA
B
E
E
= 0
= −10 mA
= −10 mA
= 0
= 0
= 0
= 5 mA
= 0, f = 1 MHz
B
B
= 5 mA
= −0.5 mA
= 0
= 0,
⎯
⎯
= −10 mA
= −10 mA
300 Ω
V
= 3 V
BB
OUTPUT
V
= −6 V
CC
0.082
32.9
Min
300
Min
1.5
1.0
0.9
80
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
−0.87
−110
Typ.
Typ.
−15
130
280
250
4.2
0.1
1.0
⎯
⎯
⎯
40
⎯
⎯
⎯
⎯
⎯
⎯
47
6
3
HN7G06FU
2005-03-29
−100
−100
1000
−250
Max
−1.2
Max
0.15
61.1
−30
100
500
0.3
5.0
1.5
1.1
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
MHz
MHz
Unit
Unit
mV
mA
kΩ
nA
nA
pF
nA
nA
pF
ns
ns
ns
V
V
V
V