hn7g11f TOSHIBA Semiconductor CORPORATION, hn7g11f Datasheet
hn7g11f
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hn7g11f Summary of contents
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... V CEO EBO I 100 mA C (Ta = 25°C) Symbol Rating Unit P * 300 150 °C j −55~150 T °C stg 1 HN7G11F 単位: mm SM6 JEDEC ― JEITA ― TOSHIBA 2-3N1A Weight (typ.) Equivalent Circuit (top view 2009-08-04 ...
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... V = 10V 5mA 10V 1MHz ― R1/R2 ― Output HN7G11F Min Typ. Max ⎯ ⎯ −100 ⎯ ⎯ −100 −20 ⎯ ⎯ ⎯ 200 500 ⎯ ⎯ 125 ⎯ −0.21 -0.30 ⎯ −0.19 -0.28 ⎯ ⎯ ...
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... B 100 I =-0.4mA B I =-0.3mA I =-1mA =-0.2mA B I =-0.1mA B -0 -1000 -10000 -100 -10 -10 ( HN7G11F Common emitter Ta=25℃ -10 -100 -1000 Collector current I (mA BE(sat) C -10000 Common emitter Ta=25℃ = -1000 ...
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... Q2 4 HN7G11F 2009-08-04 ...
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... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 5 HN7G11F 2009-08-04 ...