2sa2016 Unisonic Technologies, 2sa2016 Datasheet - Page 2

• Manufacturer Part Number: 2sa2016
• Description: Pnp Planar Transistor
• Manufacturer: Unisonic Technologies

2SA2016
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Dissipation Mounted on a ceramic board
(250mm
Collector Dissipation (Tc=25 ° C)
Collector Current
Collector Current
Base Current
Junction Temperature
Storage Temperature
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Collector-to-Base Breakdown Voltage
Collector-to- Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Gain Bandwidth Product
Output Capacitance
Turn-on Time
Storage Time
Fall Time
ELECTRICAL CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2
*0.8mm)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
PARAMETER
PARAMETER
SYMBOL
V
V
BV
BV
BV
CE(SAT)
BE(SAT)
Cob
I
I
t
h
t
CBO
EBO
STG
f
ON
t
FE
CBO
CEO
EBO
T
F
(Ta=25°С)
(Tc=25 ℃ )
Ic= -10µA, I
Ic= -1mA, R
Ic=0, I
V
V
V
Ic= -3.5A, I
Ic= -2A, I
Ic= -2A, I
V
V
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
CB
EB
CE
CE
CB
= -40V, I
= -4V, Ic=0
= -2V, Ic= -500mA
= -10V, Ic= -500mA
= -10V, f=1MHz
E
TEST CONDITIONS
= -10µA
B
B
SYMBOL
= -40mA
= -40mA
B
E
BE
= -175mA
V
V
V
E
T
=0
Icp
=0
Pc
Pc
T
CBO
CEO
EBO
Ic
STG
I
=∞
B
J
PNP PLANAR TRANSISTOR
-55 to +150
RATINGS
-1.2
150
-50
-50
-10
1.3
3.5
-6
-7
MIN
200
-50
-50
-6
-0.23 -0.39
-0.24 -0.40
-0.83
TYP MAX UNIT
290
225
50
40
25
-0.1
-0.1
560
-1.2
QW-R208-018.B
UNIT
° C
° C
W
W
2 of 6
V
V
V
A
A
A
MHz
µA
µA
pF
ns
ns
ns
V
V
V
V
V
V