2sa2070 TOSHIBA Semiconductor CORPORATION, 2sa2070 Datasheet - Page 4

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2sa2070

Manufacturer Part Number
2sa2070
Description
Toshiba Transistor Silicon Pnp Epitaxial Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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−0.03
−0.01
−0.3
−0.1
−10
−3
−1
−0.1
Note that the curves for 100 ms,
10 s and DC operation will be
different when the devices aren’t
mounted on an FR4 board (glass
epoxy, 1.6 mm thick, Cu area:
645 mm
curves must be derated linearly
with increase in temperature.
*: Single nonrepetitive pulse
I C max (continuous)
I C max (pulsed)*
Ta = 25°C
−0.3
DC operation
(Ta = 25°C)
2
Collector-emitter voltage V
). These characteristic
1000
Safe Operating Area
100
10
0.001
−1
100 ms*
1
10 s*
10 ms*
−3
1 ms*
0.01
−10
100 μs*
CE
(V)
−30
10 μs*
0.1
−100
Curves should be applied in thermal limited area.
Single nonrepetitive pulse Ta = 25°C
Mounted an on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645
2
Pulse width t
r
th
4
– t
1
w
w
(s)
10
100
1000
2006-11-09
2SA2070

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