2sa2065 TOSHIBA Semiconductor CORPORATION, 2sa2065 Datasheet - Page 4
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2sa2065
Manufacturer Part Number
2sa2065
Description
Toshiba Transistor Silicon Pnp Epitaxial Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.2SA2065.pdf
(5 pages)
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−0.01
−0.1
−10
−1
−0.1
I C max (continuous)
♦: Single nonrepetitive pulse
Note that the curves for 100 ms*,
10 s* and DC operation* will be
different when the devices aren’t
mounted on an FR4 board (glass
epoxy, 1.6 mm thick, Cu area:
645 mm
curves must be derated linearly
with increase in temperature.
I C max (pulsed) ♦
10 s♦*
Ta = 25°C
DC operation *
(Ta = 25°C)
2
Collector-emitter voltage V
). These characteristic
1000
Safe Operating Area
100
10
0.001
−1
1
100 ms♦*
10 ms♦ 1 ms♦
0.01
−10
CE
100 μs♦
(V)
0.1
−100
Pulse width t
Curves should be applied in thermal limited area.
Single nonrepetitive pulse Ta = 25°C
Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu
area: 645 mm
r
th
4
– t
1
w
w
2
(s)
)
10
100
1000
2006-11-09
2SA2065