General Purpose Amplifier Applications
•
•
•
•
Absolute Maximum Ratings
Electrical Characteristics
Note:
Marking
* : Mounted on FR4 board (10 mm × 10 mm × 1 mmt)
High voltage and high current : V
High h
Complementary to 2SC6026CT
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Excellent h
2
1
FE
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
h
( ) marking symbol
FE
Characteristics
Characteristics
classification Y (F): 120 to 240, GR (H): 200 to 400
FE
: h
:
8F
h
FE
FE
linearity
= 120 to 400
(I
C
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
= −0.1 mA) / h
Type Name
3
h
FE
Rank
CEO
(Ta = 25°C)
FE
(Ta = 25°C)
h
= −50V, I
2SA2154CT
V
FE
Symbol
Symbol
(I
V
V
V
CE (sat)
I
I
C
T
CBO
EBO
C
P
CBO
CEO
EBO
I
I
T
(Note)
f
stg
C
B
T
ob
C
= −2 mA)= 0.95 (typ.)
j
C
= −100mA (max)
V
V
V
I
V
V
C
CB
EB
CE
CE
CB
−55 to 150
= −100 mA, I
Rating
= −50 V, I
= −5 V, I
= −6 V, I
= −10 V, I
= −10 V, I
−100
100*
−50
−50
−30
150
−5
1
Test Condition
C
C
E
C
E
= 0
= −2 mA
B
= 0
= 0, f = 1 MHz
= −1 mA
= −10 mA
Unit
mW
mA
mA
°C
°C
V
V
V
Weight: 0.75 mg (typ.)
JEDEC
JEITA
TOSHIBA
CST3
0.15±0.03
120
Min
80
⎯
⎯
⎯
⎯
1
0.6±0.05
0.5±0.03
0.35±0.02
3
−0.18
Typ.
1.6
⎯
⎯
⎯
⎯
1.BASE
2.EMITTER
3.COLLECTOR
2
2SA2154CT
2-1J1A
0.05±0.03
2009-04-13
―
―
−0.1
−0.1
−0.3
Max
400
⎯
⎯
Unit: mm
MHz
Unit
μA
μA
pF
⎯
V