bfp360w Infineon Technologies Corporation, bfp360w Datasheet

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bfp360w

Manufacturer Part Number
bfp360w
Description
Npn Silicon Rf Transistor
Manufacturer
Infineon Technologies Corporation
Datasheet
NPN Silicon RF Transistor
Preliminary data




ESD : E lectro s tatic d ischarge sensitive device, observe handling precaution!
Type
BFP360W
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
T
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
1 T
2 For calculation of R
S
Low voltage/ low current operation
For low noise amplifiers
For Oscillators up to 3.5 GHz and Pout > 10 dBm
Low noise figure: 1.0 dB at 1.8 GHz
S is measured on the collector lead at the soldering point to the pcb

95°C
thJA
Marking
FBs
please refer to Application Note Thermal Resistance
1)
2)
1 = E 2 = C 3 = E 4 = B -
Pin Configuration
1
Symbol
V
V
V
V
I
I
P
T
T
T
Symbol
R
C
B
j
A
stg
CEO
CES
CBO
EBO
tot
thJS
4
-65 ... 150
-65 ... 150
-
Value
Value
 
3
210
150
15
15
35
2 60
6
2
4
Package
SOT343
1
Jun-16-2003
BFP360W
VPS05605
2
Unit
V
mA
mW
°C
Unit
K/W

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bfp360w Summary of contents

Page 1

... Pin Configuration - Symbol Value 6 V CEO 15 V CES 15 V CBO 2 V EBO 210 P tot 150 -65 ... 150 A T -65 ... 150 stg Symbol Value thJS   1 BFP360W 2 1 VPS05605 Package SOT343 Unit °C Unit K/W Jun-16-2003 ...

Page 2

... CB E Emitter-base cutoff current current gain mA 25°C, unless otherwise specified A Symbol min. V (BR)CEO I CES I CBO I EBO BFP360W Values Unit typ. max µ 100 µA 130 200 - Jun-16-2003 ...

Page 3

... Termination used for this measurement 25°C, unless otherwise specified A Symbol min min , 21e = -1dB = 1/2 | (k-(k²-1) ) from 0.1 MHz to 6 GHz  3 BFP360W Values Unit typ. max GHz - 0 dBm - 9 - Jun-16-2003 ...

Page 4

... VJE = 1.3 MJE = XTF = 0.115 - VTF = deg PTF = 0 CJC = MJC = 0.486 - XCJC = fF CJS = 0 VJS = XTB = 0.954 1E- Valid up to 6GHz 4 BFP360W 1 - 150 µA 0.35  0.5 - 0.198 V 473 fF 0.129 - 0.75 V 1.11 eV 0 0.36 nH ...

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