bfp360w Infineon Technologies Corporation, bfp360w Datasheet - Page 3

• Manufacturer Part Number: bfp360w
• Description: Npn Silicon Rf Transistor
• Manufacturer: Infineon Technologies Corporation

1 G
2 IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50
Electrical Characteristics at T
Parameter
AC Characteristics (verified by random sampling)
Transition frequency
I
Collector-base capacitance
V
Collector emitter capacitance
V
Emitter-base capacitance
V
Noise figure
I
f = 1.8 GHz
Power gain, maximum stable
I
Z
Power gain, maximum available
I
Z
Transducer gain
I
f = 1.8 GHz
I
f = 3 GHz
Third order intercept point at output
V
Z
1dB Compression point at output
I
f = 1.8 GHz
C
C
C
C
C
C
C
CB
CE
EB
L
L
CE
S
ms
= 15 mA, V
= 3 mA, V
= 15 mA, V
= 15 mA, V
= 15 mA, V
= 15 mA, V
= 15 mA, V
= Z
= Z
= Z
= 5 V, f = 1 MHz, emitter grounded
= 5 V, f = 1 MHz, base grounded
= 0.5 V, f = 1 MHz, collector grounded
= 3 V, I
= |S
Lopt
Lopt
L
= 50
21e
, f = 1.8 GHz
, f = 3 GHz
/S
C
CE

12e
CE
CE
CE
CE
CE
CE
= 15 mA, f = 1.8 GHz,
= 3 V, Z
|, G
= 3 V, f = 1 GHz
= 3 V, Z
= 3 V, Z
= 3 V, Z
= 3 V, Z
= 3 V, Z
ma
= |S
S
21e
S
S
S
S
S
= Z
= Z
= Z
= Z
= Z
= Z
/ S
Sopt
1)
Sopt
Sopt
L
L
L
12e
A
= 50
= 50
1)
= 50
,
= 25°C, unless otherwise specified
| (k-(k²-1)
,
,
2)





,
,
,
from 0.1 MHz to 6 GHz
1/2
)
3
Symbol
f
C
C
C
F
G
G
| S
IP
P
T
min
cb
ce
eb
-1dB
ms
ma
21e
3
|
2
min.
11
-
-
-
-
-
-
-
-
-
-
Values
17.5
0.28
0.47
typ.
0.3
9.5
14
24
14
12
1
9
max.
Jun-16-2003
0.5
BFP360W
-
-
-
-
-
-
-
-
-
-
Unit
GHz
pF
dB
dB
dB
dB
dBm