2sc2625l-t3p-t Unisonic Technologies, 2sc2625l-t3p-t Datasheet - Page 2

• Manufacturer Part Number: 2sc2625l-t3p-t
• Description: Npn Epitaxial Silicon Transistor
• Manufacturer: Unisonic Technologies

2SC2625
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector-Emitter Saturation Voltage
Base Emitter Saturation Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Switching Time
Thermal Resistance Junction to Case
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL SPECIFICATIONS
THERMAL CHARACTERISTICS
SWITCHING TIME TEST CIRCUIT
PARAMETER
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
PARAMETER
PARAMETER
P
W
=20μs
SYMBOL
V
V
V
CEO (SUS)
V
V
V
CE (Sat)
BE (Sat)
I
I
t
h
I
I
t
CBO
EBO
STG
B1
B2
CBO
CEO
EBO
ON
t
FE
F
(T
I
I
I
I
I
V
V
I
I
R
CBO
CEO
C
EBO
C
C
C
R
(T
C
CBO
EBO
L
=1A
=4A, I
=4A, V
=7.5A, I
L
=20Ω, Pw=20µs, Duty ≤ 2%
SYMBOL
V
=25℃, Unless Otherwise Specified)
C
=20Ω
=0.1mA
=25℃)
=1mA
=10mA
CEO(SUS)
I
=7V
V
V
=450V
V
T
C
P
T
CBO
CEO
EBO
I
STG
SYMBOL
I
C
B
D
J
TEST CONDITIONS
B
CE
=0.8A
θ
B1
NPN EPITAXIAL SILICON TRANSISTOR
=5V
JC
=-I
B2
=1.5A
t
on
0.9I
0.1I
-40 ~ +150
C
C
RATINGS
+150
450
400
400
10
80
7
3
t
RATINGS
stg
1.55
MIN
450
400
400
10
7
t
I
f
B1
I
B2
I
C
TYP
QW-R214-009,B
MAX
1.2
1.5
1.0
0.1
1.0
2.0
1.0
UNIT
℃
℃
W
2 of 3
V
V
V
V
A
A
UNIT
℃/W
UNIT
mA
mA
µs
µs
µs
V
V
V
V
V
V