2sc2570a Renesas Electronics Corporation., 2sc2570a Datasheet

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2sc2570a

Manufacturer Part Number
2sc2570a
Description
Npn Epitaxial Silicon Rf Transistor For High-frequency Low-noise Amplification
Manufacturer
Renesas Electronics Corporation.
Datasheet

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Document No. PU10207EJ01V0DS (1st edition)
(Previous No. P10404EJ3V0DS00)
Date Published April 2003 CP(K)
Printed in Japan
DESCRIPTION
FEATURES
• Low noise and high gain : NF = 1.5 dB TYP., G
• Wide dynamic range : NF = 1.9 dB TYP., G
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
2SC2570A
2SC2570A-T
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Remark To order evaluation samples, contact your nearby sales office.
Note Free air
The 2SC2570A is designed for use in Low Noise Amplifier of VHF and UHF satges.
Part Number
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
The unit sample quantity is 500 pcs.
Parameter
FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
500 pcs (Non reel)
2.5 kpcs/box (Box type)
NPN EPITAXIAL SILICON RF TRANSISTOR
Quantity
Symbol
P
V
V
V
T
tot
I
T
The mark • • • • shows major revised points.
CBO
CEO
EBO
stg
C
Note
j
A
= +25 C)
a
DATA SHEET
= 9 dB TYP. @ V
a
= 8 dB TYP. @ V
• 18 mm wide radial taping
• Supplying paper tape with in a box
65 to +150
Ratings
600
150
3.0
25
12
70
NPN SILICON RF TRANSISTOR
CE
= 10 V, I
CE
= 10 V, I
Supplying Form
Unit
mW
mA
V
V
V
C
C
C
= 15 mA, f = 1 GHz
C
= 5 mA, f = 1 GHz
2SC2570A
NEC Compound Semiconductor Devices 1980, 2003

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2sc2570a Summary of contents

Page 1

... NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION DESCRIPTION The 2SC2570A is designed for use in Low Noise Amplifier of VHF and UHF satges. FEATURES • Low noise and high gain : NF = 1.5 dB TYP., G • Wide dynamic range : NF = 1.9 dB TYP., G ORDERING INFORMATION Part Number Quantity ...

Page 2

... mA GHz CE C Note mA MHz mA GHz CE C 350 s, Duty Cycle 2% Data Sheet PU10207EJ01V0DS 2SC2570A MIN. TYP. MAX. Unit – – 1.0 A – – 1 – 200 – – 5.0 – GHz ...

Page 3

... INPUT CAPACITANCE vs. EMITTER TO BASE VOLTAGE 2 Free Air 1 0.5 0.3 125 150 0.4 0.5 Collector to Base Voltage V Emitter to Base Voltage V DC CURRENT GAIN vs. COLLECTOR CURRENT 200 100 0.9 0 Data Sheet PU10207EJ01V0DS 2SC2570A MHz ( Collector Current I (mA ...

Page 4

... FREQUENCY 0.05 0.1 NOISE FIGURE vs. COLLECTOR CURRENT GHz 0.5 0.7 1 Data Sheet PU10207EJ01V0DS 2SC2570A MAG 21e 0.2 0 Frequency f (GHz GHz Collector Current I (mA) C ...

Page 5

... SMITH CHART 1.5 GHz 1.0 0.8 RESISTANCE COMPONENT 1.5 GHZ 0.6 11e 1.0 0.4 0.4 S 22e 0.2 0 1.5 GHz 1.0 0.8 0.6 1.5 GHZ RESISTANCE COMPONENT 0.4 S 11e R 1.0 Zo 0.4 0.2 0.2 S 22e 90 Data Sheet PU10207EJ01V0DS 2SC2570A 5 ...

Page 6

... PACKAGE DIMENSIONS TO-92 (UNIT: mm) 6 5.2 MAX. 0.5 2.54 1. PIN CONNECTIONS 1. Base EIAJ : SC-43B 2. Emitter JEDEC : TO-92 3. Collector IEC : PA33 Data Sheet PU10207EJ01V0DS 2SC2570A ...

Page 7

... NEC Corporation, NEC Compound Semiconductor Devices, Ltd. and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). Please check with an NEC sales representative for Data Sheet PU10207EJ01V0DS 2SC2570A The M8E 00 0110 7 ...

Page 8

... TEL: +886-2-8712-0478 Korea Branch Office TEL: +82-2-558-2120 NEC Electronics (Europe) GmbH http://www.ee.nec.de/ TEL: +49-211-6503-01 FAX: +49-211-6503-487 California Eastern Laboratories, Inc. http://www.cel.com/ TEL: +1-408-988-3500 FAX: +1-408-988-0279 FAX: +852-3107-7309 E-mail: ncsd-hk@elhk.nec.com.hk FAX: +886-2-2545-3859 FAX: +82-2-558-5209 2SC2570A 0302-1 ...

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