2sc2570a Renesas Electronics Corporation., 2sc2570a Datasheet - Page 2

• Manufacturer Part Number: 2sc2570a
• Description: Npn Epitaxial Silicon Rf Transistor For High-frequency Low-noise Amplification
• Manufacturer: Renesas Electronics Corporation.

ELECTRICAL CHARACTERISTICS (T
h
2
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Gain Bandwidth Product
Insertion Power Gain
Noise Figure
Output Capacitance
Maximum Available Power Gain
FE
Notes 1. Pulse measurement: PW
h
Marking
CLASSIFICATION
FE
Rank
Value
2. Collector to base capacitance when the emitter grounded
Parameter
40 to 200
E
E
Symbol
C
h
MAG
S
FE
I
I
ob
NF
CBO
EBO
f
21e
T
350 s, Duty Cycle
Note 1
Note 2
2
A
V
V
V
V
V
V
V
V
= +25 C)
Data Sheet PU10207EJ01V0DS
CB
EB
CE
CE
CE
CE
CB
CE
= 10 V, I
= 1.0 V, I
= 10 V, I
= 10 V, I
= 10 V, I
= 10 V, I
= 10 V, I
= 10 V, I
Test Conditions
E
C
C
C
C
E
C
C
= 0 mA
= 20 mA
= 20 mA
= 20 mA, f = 1 GHz
= 5 mA, f = 1 GHz
= 0 mA, f = 1 MHz
= 20 mA, f = 1 GHz
= 0 mA
2%
MIN.
40
–
–
–
–
–
8
–
TYP.
11.5
5.0
1.5
0.7
10
–
–
–
MAX.
200
1.0
1.0
3.0
0.9
–
–
2SC2570A
GHz
Unit
dB
dB
pF
dB
–
A
A