2sc2309dtz-e Renesas Electronics Corporation., 2sc2309dtz-e Datasheet - Page 2

• Manufacturer Part Number: 2sc2309dtz-e
• Description: Silicon Npn Epitaxial
• Manufacturer: Renesas Electronics Corporation.

2SC2309
Electrical Characteristics
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Gain bandwidth product
Collector output capacitance
Rev.2.00 Aug 10, 2005 page 2 of 6
Item
Symbol
V
V
V
V
(BR)CBO
(BR)CEO
(BR)EBO
Cob
I
I
V
CE(sat)
h
CBO
EBO
f
FE
BE
T
Min
250
55
50
—
—
—
—
—
—
5
Typ
230
1.8
—
—
—
—
—
—
—
—
Max
0.75
500
0.5
0.5
0.2
3.5
—
—
—
—
MHz
Unit
pF
V
V
V
V
V
A
A
V
I
I
I
V
V
V
V
I
V
C
C
E
C
CB
EB
CE
CE
CE
CB
= 10 A, I
= 1 mA, R
= 10 A, I
= 10 mA, I
= 2 V, I
= 18 V, I
= 12 V, I
= 12 V, I
= 12 V, I
= 10 V, I
Test conditions
C
E
C
BE
E
C
C
B
C
E
= 0
= 0
= 0
= 0
= 2 mA
= 2 mA
= 1 mA
= 2 mA
= 0, f = 1 MHz
=
(Ta = 25°C)