2sc2309dtz-e Renesas Electronics Corporation., 2sc2309dtz-e Datasheet - Page 3

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2sc2309dtz-e

Manufacturer Part Number
2sc2309dtz-e
Description
Silicon Npn Epitaxial
Manufacturer
Renesas Electronics Corporation.
Datasheet
2SC2309
Main Characteristics
Rev.2.00 Aug 10, 2005 page 3 of 6
700
600
500
400
300
200
250
200
150
100
0.9
0.8
0.7
0.6
0.5
0.4
50
0
0.01 0.02 0.05 0.1 0.2
-20
Base to Emitter Voltage vs. Ambient
Maximum Collector Dissipation Curve
Ambient Temperature Ta (°C)
Ambient Temperature Ta (°C)
V
CE
0
DC Current Transfer Ratio vs.
Collector Current I
= 12 V
Temperature
50
Collector Current
20
0.5 1.0 2
40
V
I
C
CE
100
= 2 mA
= 12 V
C
60
(mA)
5
10 20
80
150
50
10
10
5
4
3
2
1
0
8
6
4
2
0
5
2
1
1
Collector to Base Voltage V
Base to Emitter Voltage V
Collector Output Capacitance vs.
Typical Transfer Characteristics
Collector to Emitter Voltage V
V
CE
Collector to Base Voltage
0.2
Typical Output Characteristics
4
= 12 V
2
0.4
8
26
24
22
20
18
16
14
12
10
8
6
4
2 µA
I
B
12
0.6
= 0
I
f= 1 MHz
5
E
= 0
16
0.8
BE
CB
(V)
(V)
CE
20
1.0
10
(V)
24

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