2sc2149 Renesas Electronics Corporation., 2sc2149 Datasheet

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2sc2149

Manufacturer Part Number
2sc2149
Description
Microwave Low Noise Amplifier Npn Silicon Epitaxial Transistor
Manufacturer
Renesas Electronics Corporation.
Datasheet

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Document No. P11809EJ2V0DS00 (2nd edition)
(Previous No. TC-1428)
Date Published August 1996 P
Printed in Japan
DESCRIPTION
encapsulated into new hermetic stripline packages, "micro X".
These are designed for small signal amplifier, low noise amplifier,
and oscillator applications in the L to C band, and CML circuit use.
FEATURES
2SC2148 NF: 2.1 dB TYP. @f = 500 MHz
2SC2149 NF: 2.6 dB TYP. @f = 2.0 GHz
Derating curves of the 2SC2148, 2SC2149.
temperature is limitted to 150 C. The operating junction temperature is estimated with power consumption (P
thermal resistance mentioned on these derating curves.
The 2SC2148, 2SC2149 are economical microwave transistors
The maximum junction temperature of these transistors is allowed up to 200 C, but the ambient or storage
NPN SILICON EPITAXIAL TRANSISTOR
The information in this document is subject to change without notice.
MICROWAVE LOW NOISE AMPLIFIER
DATA SHEET
2SC2148, 2SC2149
2
4.0 MIN.
SILICON TRANSISTORS
PACKAGE DIMENSIONS
1.
2.
3.
4.
2.55±0.2
Emitter
Collector
Emitter
Base
3
2.1
1
0.5±0.05
(Unit : mm)
4.0 MIN.
45
4
©
T
) and
1981

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2sc2149 Summary of contents

Page 1

... band, and CML circuit use. FEATURES 2SC2148 NF: 2.1 dB TYP 500 MHz 2SC2149 NF: 2.6 dB TYP 2.0 GHz Derating curves of the 2SC2148, 2SC2149. The maximum junction temperature of these transistors is allowed up to 200 C, but the ambient or storage temperature is limitted to 150 C. The operating junction temperature is estimated with power consumption (P thermal resistance mentioned on these derating curves ...

Page 2

... A 2 with infinite heat sink; R 130 C/W th(j-c) mounting on ceramic boad with solder ( 0.635 mm 190 C/W th(j-a) free-air; R 610 C/W th(j-a) 200 with infinite heat sink; R 120 C/W th(j-c) mounting on ceramic boad with solder ( 0.635 mm 180 C/W th(j-a) free-air; R 600 C/W th(j-a) 200 2SC2148, 2SC2149 ...

Page 3

... GHz 0.55 pF 7.5 9.3 dB 2.1 3 COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 0.5 50 0.5 V 2SC2148, 2SC2149 TEST CONDITIONS 2 1.0 MHz mA 1.0 GHz ...

Page 4

... Emitter to Base Voltage 0 0 2SC2148, 2SC2149 INSERTION GAIN vs. COLLECTOR CURRENT 1.0 GHz Collector Current mA C NOISE FIGURE vs. COLLECTOR CURRENT 500 MHz untuned (50 ) tuned Collector Current mA ...

Page 5

... C) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 0 0 2SC2148, 2SC2149 TEST CONDITIONS 2 1.0 MHz 1.0 GHz ...

Page 6

... CB V Emitter to Base Voltage INSERTION GAIN vs. COLLECTOR CURRENT 1.0 GHz 0 Collector Current mA C NOISE FIGURE vs. COLLECTOR CURRENT 0 Collector Current mA C 2SC2148, 2SC2149 1.85 GHz ...

Page 7

... [MEMO] 2SC2148, 2SC2149 7 ...

Page 8

... The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. 2SC2148, 2SC2149 M4 96.5 ...

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