2sc2149 Renesas Electronics Corporation., 2sc2149 Datasheet - Page 3

• Manufacturer Part Number: 2sc2149
• Description: Microwave Low Noise Amplifier Npn Silicon Epitaxial Transistor
• Manufacturer: Renesas Electronics Corporation.

2SC2148
ABSOLUTE MAXIMUM RATINGS (T
ELECTRICAL CHARACTERISTICS (T
TYPICAL CHARACTERISTICS (T
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Output Capacitance *
Insertion Gain
Noise Figure
Maximum Available Gain
* The emitter terminal should be connected to the guard terminal of the three-terminal capacitance bridge.
CHARACTERISTIC
200
100
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Total Power Dissipation
Junction Temperature
Storage Temperature
50
20
10
0.5
1
I
DC CURRENT GAIN vs.
COLLECTOR CURRENT
C
Collector Current mA
SYMBOL
I
I
h
f
C
NF
MAG
CBO
EBO
T
5
FE
S
ob
21e
10
2
V
CE
A
V
V
V
I
P
P
T
Tstg
C
= 10 V
= 25 C)
j
CBO
CEO
EBO
T(T
T(Tc = 150 C)
MIN.
A
7.5
30
A
A
= 25 C)
= 48 C)
= 25 C)
50
TYP.
0.55
13.3
3.0
9.3
2.1
80
65 to +150
250
250
200
3.0
30
14
50
MAX.
200
0.1
0.1
3.5
0.5
50
10
5
1
0.5
mW
mW
UNIT
V
mA
GHz
V
V
V
pF
dB
dB
dB
CE
C
C
A
A
= 10 V
V
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
BE
0.6
V
V
V
V
V
V
V
V
Base to Emitter Voltage V
CB
EB
CE
CE
CB
CE
CE
CE
2SC2148, 2SC2149
= 15 V, I
= 2.0 V, I
= 10 V, I
= 10 V, I
= 10 V, I
= 10 V, I
= 10 V, I
= 10 V, I
TEST CONDITIONS
0.7
E
C
C
E
C
C
C
C
= 0
= 0, f = 1.0 MHz
= 10 mA
= 10 mA
= 10 mA, f = 1.0 GHz
= 3.0 mA, f = 500 MHz
= 10 mA, f = 1.0 GHz
= 0
0.8
0.9
3