2sc4617l-an3-r Unisonic Technologies, 2sc4617l-an3-r Datasheet - Page 2

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2sc4617l-an3-r

Manufacturer Part Number
2sc4617l-an3-r
Description
Npn Silicon Transistor
Manufacturer
Unisonic Technologies
Datasheet
2SC4617
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Collector Base Breakdown Voltage
Collector Emitter Breakdown Voltage
Emitter-base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Output Capacitance
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS
CLASSIFICATION OF h
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
RANGE
RANK
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
PARAMETER
PARAMETER
FE
120 ~ 270
SYMBOL
V
Q
BV
BV
BV
CE(SAT)
I
I
C
h
CBO
EBO
f
FE
T
CBO
CEO
EBO
ob
SOT-523
SOT-23/SOT-323
(Ta = 25℃)
(Ta= 25℃, unless otherwise specified)
I
I
I
V
V
V
I
V
V
C
C
E
C
CB
EB
CE
CE
CE
= 50µA
= 1mA
=50µA
=50mA, I
= 7V
=60V
=6V, I
=12V, I
= 12V, I
TEST CONDITIONS
C
=1mA
B
E
E
=5mA
= -2mA, f=100MHz
= 0A, f=1MHz
SYMBOL
V
V
V
180 ~ 390
T
P
P
T
CBO
CEO
EBO
I
STG
C
C
C
J
R
NPN SILICON TRANSISTOR
MIN
-55 ~ +150
120
RATINGS
60
50
7
+150
0.15
150
200
60
50
7
TYP
180
2
270 ~ 560
S
MAX
560
0.1
0.1
0.4
3.5
QW-R206-081.B
UNIT
mW
mW
UNIT
2 of 5
MHz
V
V
V
A
µA
µA
pF
V
V
V
V

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