2sc4643 HITACHI, 2sc4643 Datasheet - Page 2

• Manufacturer Part Number: 2sc4643
• Description: Silicon Npn Epitaxial
• Manufacturer: HITACHI

2SC4643
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Electrical Characteristics (Ta = 25°C)
Item
Collector to base breakdown
voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector output capacitance
Gain bandwidth product
Power gain
Noise figure
Note: Marking is “DR”.
See characteristic curve of 2SC4592
2
Symbol
V
I
I
I
h
Cob
f
PG
NF
CBO
CEO
EBO
T
FE
(BR)CBO
Min
15
—
—
—
40
—
5.5
7.5
—
Symbol
V
V
V
I
P
Tj
Tstg
C
Typ
—
—
—
—
120
1.0
8.0
10.5
1.2
CBO
CEO
EBO
C
Max
—
1
1
10
250
1.7
—
—
2.5
Unit
V
mA
—
pF
GHz
dB
dB
Ratings
15
9
1.5
50
400
150
–55 to +150
A
A
Test conditions
I
V
V
V
V
V
f = 1MHz
V
V
f = 900 MHz
V
f = 900 MHz
C
CB
CE
EB
CE
CB
CE
CE
CE
= 10 A, I
= 12 V, I
= 9 V, R
= 1.5 V, I
= 5 V, I
= 5 V, I
= 5 V, I
= 5 V, I
= 5 V, I
C
E
C
C
C
Unit
V
V
V
mA
mW
E
BE
E
C
C
= 20 mA
= 0,
= 20 mA
= 20 mA,
= 5 mA,
C
= 0
= 0
=
= 0