2sc4261qi-tr-e Renesas Electronics Corporation., 2sc4261qi-tr-e Datasheet - Page 2

• Manufacturer Part Number: 2sc4261qi-tr-e
• Description: Silicon Npn Epitaxial
• Manufacturer: Renesas Electronics Corporation.

2SC4261
Electrical Characteristics
Collector to base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector to emitter saturation voltage
DC current transfer ratio
Collector output capacitance
Gain bandwidth product
Oscillating output voltage
Rev.3.00 Aug 10, 2005 page 2 of 4
Item
Symbol
V
V
(BR)CBO
V
Cob
I
I
I
CE(sat)
h
CBO
CEO
EBO
OSC
f
FE
T
Min
1.8
25
50
—
—
—
—
—
—
Typ
200
0.7
2.4
—
—
—
—
—
—
Max
180
0.3
1.0
0.3
1.0
10
—
—
—
Unit
GHz
mV
pF
V
V
A
A
A
I
V
V
V
I
V
V
V
V
f = 930 MHz
C
C
CB
CE
EB
CE
CB
CE
CC
= 10 A, I
= 20 mA, I
= 3 V, I
= 15 V, I
= 15 V, R
= 5 V, I
= 10 V, I
= 5 V, I
= 5 V, I
Test conditions
C
C
C
C
E
E
B
E
= 0
= 5 mA
= 20 mA
= 5 mA,
= 0
BE
= 0
= 4 mA
= 0, f = 1MHz
=
(Ta = 25°C)