2sc4261qi-tr-e Renesas Electronics Corporation., 2sc4261qi-tr-e Datasheet - Page 3

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2sc4261qi-tr-e

Manufacturer Part Number
2sc4261qi-tr-e
Description
Silicon Npn Epitaxial
Manufacturer
Renesas Electronics Corporation.
Datasheet
2SC4261
Main Characteristics
Rev.3.00 Aug 10, 2005 page 3 of 4
1,000
500
200
100
120
100
50
20
10
80
60
40
20
4
3
2
1
0
0
Maximum Collector Dissipation Curve
1
0
Ambient Temperature Ta (°C)
Oscillating Output Voltage vs.
V
Pulse
f = 930 MHz
Gain Bandwidth Product vs.
Collector Current I
CE
Supply Voltage V
2
2
= 5 V
3
Collector Current
Supply Voltage
50
4
5
5
10
6
100
CC
C
I
C
(mA)
20
= 8 mA
(V)
8
150
50
10
1,000
200
160
120
500
200
100
1.1
1.0
0.9
0.8
0.7
0.6
80
40
50
20
10
0
0.5
1
1
Collector to Base Voltage V
Collector Output Capacitance vs.
DC Current Transfer Ratio vs.
I
f = 1 MHz
Oscillating Output Voltage vs.
V
Pulse
E
f = 930 MHz
Collector Current I
Collector Current I
1.0
CE
Collector to Base Voltage
2
= 0
2
= 5 V
Collector Current
Collector Current
2
5
5
10
10
5
3
C
C
V
5
10
20
(mA)
(mA)
20
CC
CB
= 8 V
20
(V)
50
50

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