2sc4906 HITACHI, 2sc4906 Datasheet - Page 2

• Manufacturer Part Number: 2sc4906
• Description: Silicon Npn Epitaxial
• Manufacturer: HITACHI

2SC4906
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Electrical Characteristics (Ta = 25°C)
Item
Collector to base breakdown
voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector output capacitance
Gain bandwidth product
Power gain
Noise figure
Note: Marking is “YN–”.
2
Symbol
V
I
I
I
h
Cob
f
PG
NF
CBO
CEO
EBO
T
FE
(BR)CBO
Min
20
—
—
—
50
—
4
9.5
—
Symbol
V
V
V
I
P
Tj
Tstg
C
Typ
—
—
—
—
120
0.9
5.8
12.0
1.6
CBO
CEO
EBO
C
Max
—
1
1
10
250
1.4
—
—
3.0
Unit
V
µA
mA
µA
pF
GHz
dB
dB
Ratings
20
12
2
50
100
150
–55 to +150
Test conditions
I
V
V
V
V
V
f = 1 MHz
V
V
f = 900 MHz
V
f = 900 MHz
C
CB
CE
EB
CE
CB
CE
CE
CE
= 10 µA, I
= 15 V, I
= 12 V, R
= 2 V, I
= 5 V, I
= 5 V, I
= 5 V, I
= 5 V, I
= 5 V, I
C
C
E
C
C
C
Unit
V
V
V
mA
mW
°C
°C
E
E
= 0,
= 0
= 20 mA
= 20 mA
= 20 mA,
= 5 mA,
BE
= 0
= 0
=