2sc4903 HITACHI, 2sc4903 Datasheet - Page 2
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2sc4903
Manufacturer Part Number
2sc4903
Description
Silicon Npn Bipolar Transistor
Manufacturer
HITACHI
Datasheet
1.2SC4903.pdf
(7 pages)
2SC4903
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Electrical Characteristics (Ta = 25°C)
Item
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Output capacitance
Gain bandwidth product
Power gain
Noise figure
Note:
Attention: This is electrostatic sensitive device.
2
1. Marking for 2SC4903 is “YL–”.
Symbol
I
I
I
h
Cob
f
PG
NF
CBO
CEO
EBO
T
FE
Min
—
—
—
50
—
4.0
9.5
—
Symbol
V
V
V
I
P
Tj
Tstg
C
Typ
—
—
—
120
0.6
6.0
12.0
1.6
CBO
CEO
EBO
C
Max
10
1
10
250
1.0
—
—
3.0
Unit
µA
mA
µA
pF
GHz
dB
dB
Ratings
20
12
2
30
100
150
–55 to +150
Test conditions
V
V
V
V
V
f = 1 MHz
V
V
f = 900 MHz
V
f = 900 MHz
CB
CE
EB
CE
CB
CE
CE
CE
= 20 V, I
= 12 V, R
= 2 V, I
= 5 V, I
= 5 V, I
= 5 V, I
= 5 V, I
= 5 V, I
C
C
E
C
C
C
Unit
V
V
V
mA
mW
°C
°C
E
= 0,
= 0
= 10 mA
= 10 mA
= 10 mA,
= 5 mA,
BE
= 0
=