2sc4702xv-tr-e Renesas Electronics Corporation., 2sc4702xv-tr-e Datasheet - Page 2

• Manufacturer Part Number: 2sc4702xv-tr-e
• Description: Silicon Npn Epitaxial
• Manufacturer: Renesas Electronics Corporation.

2SC4702
Electrical Characteristics
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current
Collector to emitter saturation voltage
DC current transfer ratio
Gain bandwidth product
Collector output capacitance
Rev.3.00 Aug 10, 2005 page 2 of 5
Item
Symbol
V
V
V
V
(BR)CBO
(BR)CEO
(BR)EBO
Cob
I
CE(sat)
h
CBO
f
FE
T
Min
300
300
60
—
—
—
—
5
Typ
1.5
80
—
—
—
—
—
—
Max
150
0.1
0.5
—
—
—
—
—
MHz
Unit
pF
V
V
V
V
A
I
I
I
V
I
V
V
V
C
C
E
C
CB
CE
CE
CB
= 10 A, I
= 1 mA, R
= 10 A, I
= 30 mA, I
= 250 V, I
= 6 V, I
= 6 V, I
= 10 V, I
Test conditions
C
C
C
E
BE
B
E
= 2 mA
= 5 mA
= 0
= 0
E
= 3 mA
= 0, f = 1 MHz
=
= 0
(Ta = 25°C)