2sc4702xv-tr-e Renesas Electronics Corporation., 2sc4702xv-tr-e Datasheet - Page 3

• Manufacturer Part Number: 2sc4702xv-tr-e
• Description: Silicon Npn Epitaxial
• Manufacturer: Renesas Electronics Corporation.

2SC4702
Main Characteristics
Rev.3.00 Aug 10, 2005 page 3 of 5
0.01
0.01
150
100
100
1.0
0.1
1.0
0.1
Collector to Emitter Saturation Voltage vs.
50
10
10
0
Maximum Collector Dissipation Curve
0.1
0
Base to Emitter Voltage V
Typical Transfer Characteristics
Ambient Temperature Ta (°C)
I
Pulse Test
Collector Current I
C
0.2
/I
V
Pulse Test
B
CE
= 10
Collector Current
= 6 V
1.0
50
Ta = 75°C
0.4
Ta = 75°C
–25
25
0.6
100
10
25
C
(mA)
0.8
BE
–25
(V)
150
100
1.0
1,000
1,000
100
100
10
10
10
8
6
4
2
0
1
1
0.1
0.1
Collector to Emitter Voltage V
Typical Output Characteristics
Ta = 75°C
V
Pulse Test
DC Current Transfer Ratio vs.
Gain Bandwidth Product vs.
CE
Collector Current I
Collector Current I
20
80
= 6 V
100
Collector Current
Collector Current
1.0
1.0
40
60
25
–25
60
I
10
10
B
C
C
= 10 µA
V
Pulse Test
(mA)
(mA)
CE
50
40
30
20
80
= 6 V
CE
(V)
100
100
100