2sc3647l-ab3-r Unisonic Technologies, 2sc3647l-ab3-r Datasheet

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2sc3647l-ab3-r

Manufacturer Part Number
2sc3647l-ab3-r
Description
Npn Epitaxial Silicon Transistor
Manufacturer
Unisonic Technologies
Datasheet
2SC3647
HIGH-VOLTAGE SWITCHING
APPLICATIONS
* Adoption of FBET, MBIT processes
* High breakdown voltage and large current capacity
* Fast switching time
* Very small size marking it easy to provide high - density,
small-sized hybrid ICs
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co.,
FEATURES
ORDERING INFORMATION
2SC3647-AB3-R 2SC3647L-AB3-R
Normal
UNISONIC TECHNOLOGIES CO.,
Order Number
Lead free
Package
SOT-89
NPN EPITAXIAL SILICON TRANSISTOR
Tape Reel
Packing
PIN CONFIGURATION
*Pb-free plating product number: 2SC3647L
PIN NO.
1
2
3
Emitter
Collector
Base
1
PIN NAME
SOT-89
QW-R208-039,A
1

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2sc3647l-ab3-r Summary of contents

Page 1

... Fast switching time * Very small size marking it easy to provide high - density, small-sized hybrid ICs ORDERING INFORMATION Order Number Normal Lead free 2SC3647-AB3-R 2SC3647L-AB3-R www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., NPN EPITAXIAL SILICON TRANSISTOR 1 *Pb-free plating product number: 2SC3647L PIN CONFIGURATION PIN NO. ...

Page 2

... Fall Time Gain-Bandwidth Product CLASSIFICATION OF hFE ■ RANK RANGE SWITCHING TIME TEST CIRCUIT ■ PW=20μS DC≤1% INPUT 10I = -10I = Unit (Resistance:Ω, Capacitance:F ) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw NPN EPITAXIAL SILICON TRANSISTOR (Ta = 25℃) SYMBOL V CBO V CEO V EBO ...

Page 3

... Base to Emitter Voltage 100 1 Collector to Base Voltage, V UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw NPN EPITAXIAL SILICON TRANSISTOR 3mA 2mA 1mA (V) CE 1000 0.8 1.0 1.2 (V) BE 1000 F = 1MHz 100 100 (V) CB ...

Page 4

... T he inform ation presented in this docum ent does not form part of any quotation or contract, is believ accurate and reliable and changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw NPN EPITAXIAL SILICON TRANSISTOR ...

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