2sc3076 TOSHIBA Semiconductor CORPORATION, 2sc3076 Datasheet

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2sc3076

Manufacturer Part Number
2sc3076
Description
Transistor Power Amplifier, Switcing Applications
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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Part Number
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Quantity
Price
Part Number:
2SC3076
Manufacturer:
toshiba
Quantity:
30 000
Power Amplifier Applications
Power Switching Applications
Absolute Maximum Ratings
Low collector saturation voltage: V
Excellent switching time: t
Complementary to 2SA1241
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/Derating Concept and Methods) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Characteristics
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
Ta = 25°C
Tc = 25°C
stg
= 1.0 μs (typ.)
CE (sat)
(Ta = 25°C)
Symbol
V
V
V
T
P
CBO
CEO
EBO
I
I
T
stg
C
B
C
j
2SC3076
= 0.5 V (max) (I
−55 to 150
Rating
150
1.0
50
50
10
5
2
1
1
C
= 1 A)
Unit
°C
°C
W
V
V
V
A
A
Weight: 0.36 g (typ.)
Weight: 0.36 g (typ.)
JEDEC
JEITA
TOSHIBA
JEDEC
JEITA
TOSHIBA
2-7B1A
2-7J1A
2006-11-09
2SC3076
Unit: mm

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2sc3076 Summary of contents

Page 1

... Symbol Rating Unit CBO CEO EBO 1 150 ° −55 to 150 °C stg 1 2SC3076 Unit: mm JEDEC ― JEITA ― TOSHIBA 2-7B1A Weight: 0.36 g (typ.) JEDEC ― JEITA ― TOSHIBA 2-7J1A Weight: 0.36 g (typ.) 2006-11-09 ...

Page 2

... MHz μ INPUT stg − Duty cycle ≤ 2SC3076 Min Typ. Max ― ― 1.0 ― ― 1.0 50 ― ― 70 ― 240 40 ― ― ― ― 0.5 ― ― 1.2 ― 80 ― ― ...

Page 3

... Collector current I (A) C 1.2 1.0 0 0.6 0.4 0.2 0 2.4 2.8 0 0.4 1000 500 300 100 0.01 0.03 0.05 2.4 2 0.5 0.3 0 0.01 0.03 0.05 3 2SC3076 V – Common emitter Tc = 100° 0.8 1.2 1.6 2.0 2.4 2.8 Collector current I ( – Common emitter 100°C 25 −55 0.1 0.3 0 Collector current I ( – ...

Page 4

... V CEO max temperature. 0.01 0 Collector-emitter voltage (2) 2 ( Ambient temperature Ta (°C) 50 100 4 2SC3076 P – ( infinite heat sink (2) Ceramic substrate 50 × 50 × 0.8 mm (3) No heat sink 50 75 100 125 150 175 2006-11-09 ...

Page 5

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2SC3076 20070701-EN 2006-11-09 ...

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