2n7002zw Unisonic Technologies, 2n7002zw Datasheet - Page 2

• Manufacturer Part Number: 2n7002zw
• Description: 300m Amps, 60 Volts Dual N-channel Enhancement Mode Mosfet
• Manufacturer: Unisonic Technologies

2N7002ZW
Note:
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note)
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Turn-ON Delay Time
Turn-OFF Delay Time
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
Maximum Pulsed Drain-Source Diode
Forward Current
Maximum Continuous Drain-Source Diode
Forward Current
Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size.
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation
Derating above T
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS
2. Pulse width≦300μs, Duty cycle≦1%
ABSOLUTE MAXIMUM RATINGS
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
PARAMETER
A
PARAMETER
=25°C
Continuous
Pulse(Note 2)
SYMBOL
R
V
BV
t
C
t
C
D(OFF)
C
Preliminary
I
I
GS(TH)
DS(ON)
D(ON)
V
I
GSS
DSS
SM
Is
OSS
RSS
ISS
SD
(T
DSS
(T
a
SYMBOL
a
= 25°C)
=25°C)
V
V
T
P
T
GSS
I
STG
DSS
I
R
D
V
V
V
V
V
V
V
V
D
D
J
L
=0.2 A, V
GS
DS
DS
DS
GS
GS
DS
GS
=150Ω, R
=60V, V
=0V, V
=10V, I
=25V, V
=0V, I
=10V, I
=5V, I
=0V, Is=115mA (Note )
TEST CONDITIONS
D
D
GS
=10µA
D
=0.05A
DD
D
GS
GS
=1mA
G
=0.5A, T
=±20V
=30V, V
=10Ω
=0V
=0V, f=1.0MHz
J
GS
=125°C
-55 ~ +150
RATINGS
=10V,
+150
±20
300
800
200
1.6
60
MIN
1.0
60
Power MOSFET
TYP
1.85
0.88
3.0
25
10
12
20
MAX UNIT
13.5
±10
115
1.0
2.5
7.5
5.0
1.5
0.8
50
25
20
30
QW-R502-539.a
mW/°C
UNIT
mW
mA
°C
°C
V
V
2 of 3
mA
µA
µA
pF
pF
pF
ns
ns
Ω
V
V
V
A