2n7002k-01 NXP Semiconductors, 2n7002k-01 Datasheet - Page 6

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2n7002k-01

Manufacturer Part Number
2n7002k-01
Description
2n7002k Trenchmos Tm Logic Level Fet
Manufacturer
NXP Semiconductors
Datasheet
Philips Semiconductors
9397 750 11703
Product data
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
R DSon
( )
T
T
(A)
I D
j
j
0.5
0.4
0.3
0.2
0.1
= 25 C
10
= 25 C
8
6
4
2
0
0
function of drain-source voltage; typical values.
of drain current; typical values.
0
0
T j = 25 C
0.1
V GS = 3.5 V
0.5
0.2
1
4 V
V GS = 10V
0.3
4.5 V
1.5
T j = 25 C
0.4
V DS (V)
I D (A)
03an70
03an71
6 V
4.5 V
3.5 V
10 V
4 V
3 V
6 V
0.5
Rev. 01 — 20 October 2003
2
Fig 6. Transfer characteristics: drain current as a
Fig 8. Normalized drain-source on-state resistance
T
a
a
(A)
j
I D
2.4
1.8
1.2
0.6
0.5
0.4
0.3
0.2
0.1
= 25 C and 150 C; V
=
0
0
function of gate-source voltage; typical values.
factor as a function of junction temperature.
-60
---------------------------- -
R
0
DSon 25 C
V DS > I D x R DSon
R
DSon
0
2
TrenchMOS™ logic level FET
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
DS
150 C
60
I
D
x R
4
DSon
120
T j = 25 C
2N7002K
V GS (V)
T j ( C)
03an72
03aa28
180
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