2n7002sspt Chenmko Enterprise Co. Ltd., 2n7002sspt Datasheet - Page 2

• Manufacturer Part Number: 2n7002sspt
• Description: Surface Mount Dual N-channel Enhancement Mos Fet
• Manufacturer: Chenmko Enterprise Co. Ltd.

Note:
Electrical Characteristics
Symbol
OFF CHARACTERISTICS
BV
I
I
I
ON CHARACTERISTICS
V
R
I
g
DYNAMIC CHARACTERISTICS
Q
Q
Q
C
C
C
t
t
t
t
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
I
V
1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
DSS
GSSF
GSSR
D(ON)
on
r
off
f
S
SM
FS
GS(th)
DS(ON)
SD
g
gs
gd
iss
oss
rss
DSS
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward
Voltage
On-State Drain Current
RATING CHARACTERISTIC CURVES ( 2N7002SSPT )
(Note 1)
T
A
= 25°C unless otherwise noted
Conditions
V
V
V
V
V
V
V
V
V
V
V
V
I
R
V
I
R
V
I = 510 mA
f = 1.0 MHz
D
D
GS
DS
GS
GS
DS
GS
GS
GS
DS
DS
D
DS
DD
DD
GS
GEN
GEN
= 250 mA, V
= 250 mA, V
= 40 V, V
= -20 V, V
= V
= 10 V , I
= 25 V, V
= 25 V, V
= 0 V, I
= 20 V, V
= 10 V, I
= 4.5 V, I
= 10 V, V
= 25 V,
= 0 V, I
= 25V
= 25
= 25
GS
, I
D
D
S
D
= 250 µA
= 250 µA
D
= 200 mA
GS
DS
= 510 m A
DS
GS
GS
DS
= 350 mA
D
GS
GS
= 0 V
= 0 V
= 510 mA
= 10 V,
= 0 V,
= 0 V
= 10V
= 10 V,
= 10 V,
(Note 1)
T
C
=125°C
1500
Min
50
1
1.6
0.8
Typ
400
0.19
0.33
1.9
13
11
20
1
5
6
6
5
1
Max
0.5
-100
510
100
2.5
4.0
1.5
20
20
20
20
1.2
1
2
Units
mA
mA
mS
mA
µA
nC
V
nA
nA
nS
nS
pF
V
A
V