si7858adp Vishay, si7858adp Datasheet - Page 3
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si7858adp
Manufacturer Part Number
si7858adp
Description
N-channel 12-v D-s Mosfet
Manufacturer
Vishay
Datasheet
1.SI7858ADP.pdf
(6 pages)
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73164
S-80440-Rev. C, 03-Mar-08
0.005
0.004
0.003
0.002
0.001
0.000
60
10
1
6
5
4
3
2
1
0
0.00
0
0
V
I
Source-Drain Diode Forward Voltage
D
10
DS
1 0
T
0.2
On-Resistance vs. Drain Current
= 29 A
J
= 6 V
= 150 °C
V
SD
Q
20
g
- Source-to-Drain Voltage (V)
0.4
2 0
- Total Gate Charge (nC)
I
D
Gate Charge
- Drain Current (A)
30
3 0
0.6
40
4 0
0.8
V
V
50
T
GS
GS
J
= 25 °C
= 2.5 V
= 4.5 V
1.0
5 0
60
1.2
60
70
0.015
0.012
0.009
0.006
0.003
0.000
8000
7000
6000
5000
4000
3000
2000
1000
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
-
V
I
D
1
25
GS
= 29 A
2
C
= 4.5 V
V
V
rss
C
T
GS
2
DS
0
iss
J
-
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
Junction Temperature (°C)
4
25
C
3
Capacitance
oss
50
6
4
Vishay Siliconix
Si7858ADP
75
I
D
5
= 29 A
8
100
www.vishay.com
6
10
125
7
150
12
8
3