si7858adp Vishay, si7858adp Datasheet - Page 4
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si7858adp
Manufacturer Part Number
si7858adp
Description
N-channel 12-v D-s Mosfet
Manufacturer
Vishay
Datasheet
1.SI7858ADP.pdf
(6 pages)
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Si7858ADP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
- 0.6
- 0.8
- 1.0
0.4
0.2
0.0
0.01
0.1
- 50
2
1
10 -
4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
- 25
0
Threshold Voltage
T
J
10 -
- T emperature ( °C)
2 5
3
5 0
Single Pulse
Normalized Thermal Transient Impedance, Junction-to-Ambient
I
D
7 5
= 250 µA
Limited by R
0.01
100
0.1
10 -
10
0.01
100
1
2
* V
Safe Operating Area Junction-to-Case
125
GS
DS(on)
> minimum V
V
150
Square Wave Pulse Duration (s)
*
0.1
DS
- Drain-to-Source Voltage (V)
10 -
Single Pulse
T
1
C
= 25 °C
GS
at which R
1
DS(on)
200
160
120
1
80
40
0
10
0.001
is specified
1 ms
10 ms
100 ms
1 s
10 s
DC
100
0.01
1 0
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
Single Pulse Power
P
DM
JM
-
T
t
1
A
Time (s)
= P
0.1
t
S-80440-Rev. C, 03-Mar-08
2
Document Number: 73164
DM
Z
th J A
th J A
100
t
t
1
2
(t )
= 50 °C//W
1
600
10