si7852dp-t1 Vishay, si7852dp-t1 Datasheet - Page 3

• Manufacturer Part Number: si7852dp-t1
• Description: N-channel 80-v D-s Mosfet
• Manufacturer: Vishay

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71627
S-72691-Rev. D, 24-Dec-07
0.01
0.04
0.03
0.02
0.01
0.00
100
0.1
10
20
16
12
1
8
4
0
0.0
0
0
V
I
D
Source-Drain Diode Forward Voltage
DS
= 10 A
0.2
On-Resistance vs. Drain Current
= 40 V
10
V
SD
T
15
Q
J
g
= 150 °C
-
0.4
V
I
D
- Total Gate Charge (nC)
Source-to-Drain Voltage (V)
GS
Gate Charge
- Drain Current (A)
20
= 6 V
0.6
30
30
0.8
T
J
= 25 °C
45
V
40
GS
1.0
= 10 V
1.2
50
60
3000
2500
2000
1500
1000
0.08
0.06
0.04
0.02
0.00
500
2.5
2.0
1.5
1.0
0.5
0.0
0
- 5 0
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
- 25
D
GS
= 10 A
= 10 V
2
V
V
C
DS
GS
20
T
rss
0
J
- Gate-to-Source Voltage (V)
-
- Drain-to-Source Voltage (V)
Junction Temperature (°C)
25
Capacitance
4
C
40
50
C
Vishay Siliconix
oss
iss
I
6
D
75
= 10 A
Si7852DP
www.vishay.com
100
60
8
125
150
10
80
3