si7852dp-t1 Vishay, si7852dp-t1 Datasheet - Page 4

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si7852dp-t1

Manufacturer Part Number
si7852dp-t1
Description
N-channel 80-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Si7852DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
-
-
-
1.0
0.5
0.0
0.5
1.0
1.5
0.01
- 50
0.1
2
1
10
-
-4
0.1
25
Duty Cycle = 0.5
0.2
0.05
0.02
Single Pulse
0
T
Threshold Voltage
J
- Temperature (°C)
25
10
-3
50
I
D
= 250 μA
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
100
80
60
40
20
100
0.001
0
10
-2
Single Pulse Power, Junction-to-Ambient
125
150
0.01
Square Wave Pulse Duration (s)
10
-1
Time (s)
0.1
100
0.1
10
1
1
10
1
-5
10
-4
Avalanche Current vs. Time
10
T = 125 °C
10
10
Notes:
1 .
2. Per Unit Base = R
3 . T
4. Surface Mounted
-3
P
Duty Cycle, D =
DM
JM
Time (s)
-
T
T
10
t
A
1
= 25 °C
= P
S-72691-Rev. D, 24-Dec-07
-2
t
2
Document Number: 71627
DM
Z
thJA
10
thJA
100
t
t
1
2
(t)
-1
= 52 °C/W
1
600
10

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