bsc109n10ns3g Infineon Technologies Corporation, bsc109n10ns3g Datasheet - Page 5

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bsc109n10ns3g

Manufacturer Part Number
bsc109n10ns3g
Description
Optimostm3 Power-transistor
Manufacturer
Infineon Technologies Corporation
Datasheet

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Rev. 2.0
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
=f(V
=f(V
120
100
140
120
100
80
60
40
20
80
60
40
20
DS
GS
0
0
); T
0
0
); |V
j
=25 °C
j
GS
DS
|>2|I
D
|R
1
2
10 V
DS(on)max
7 V
V
V
GS
DS
[V]
[V]
6 V
150 °C
4
2
5.5 V
5 V
25 °C
page 5
3
6
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
fs
DS(on)
=f(I
100
24
22
20
18
16
14
12
10
80
60
40
20
D
=f(I
8
6
0
); T
0
0
D
j
); T
=25 °C
GS
j
=25 °C
20
20
5 V
40
40
I
I
D
D
[A]
[A]
BSC109N10NS3 G
60
60
5.5 V
6 V
10 V
80
80
7 V
2010-03-25
100
100

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