bsc109n10ns3g Infineon Technologies Corporation, bsc109n10ns3g Datasheet - Page 6

• Manufacturer Part Number: bsc109n10ns3g
• Description: Optimostm3 Power-transistor
• Manufacturer: Infineon Technologies Corporation

Rev. 2.0
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
10
10
10
10
10
22
20
18
16
14
12
10
DS
=f(T
8
6
4
2
0
4
3
2
1
0
-60
); V
0
j
); I
GS
D
-20
=0 V; f =1 MHz
=46 A; V
20
20
98 %
GS
V
=10 V
T
j
DS
60
40
[°C]
typ
[V]
Coss
Ciss
Crss
100
60
140
180
page 6
80
10 Typ. gate threshold voltage
V
parameter: I
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
1000
100
3.5
2.5
1.5
0.5
10
=f(T
SD
4
3
2
1
0
1
-60
)
0
j
); V
D
j
GS
-20
=V
0.5
150 °C
DS
20
45 µA
V
T
25 °C, 98%
SD
j
60
[°C]
25 °C
1
450 µA
[V]
BSC109N10NS3 G
100
1.5
150 °C, 98%
140
2010-03-25
180
2