bsc196n10nsg Infineon Technologies Corporation, bsc196n10nsg Datasheet - Page 4

• Manufacturer Part Number: bsc196n10nsg
• Description: N-channel Mosfet 20v?300v Power Transistor Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev. 1.04
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
=f(V
=f(T
100
10
10
10
10
10
80
60
40
20
DS
0
-1
3
2
1
0
C
10
0
); T
)
-1
C
p
=25 °C; D =0
40
10
0
T
V
C
DS
10
80
[°C]
DC
1
[V]
1 ms
100 µs
10 µs
1 µs
120
10
2
100 ns
160
10
page 4
3
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJC
=f(T
50
40
30
20
10
=f(t
10
10
10
10
0
C
-1
-2
1
0
); V
0
10
p
)
-5
0.02
0.05
0.2
0.5
0.1
single pulse
GS
≥10 V
0.01
p
10
/T
40
-4
10
T
-3
t
C
80
p
[°C]
[s]
10
BSC196N10NS G
-2
120
10
-1
2008-05-08
160
10
0