bsc196n10nsg Infineon Technologies Corporation, bsc196n10nsg Datasheet - Page 6
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bsc196n10nsg
Manufacturer Part Number
bsc196n10nsg
Description
N-channel Mosfet 20v?300v Power Transistor Power Mosfet
Manufacturer
Infineon Technologies Corporation
Datasheet
1.BSC196N10NSG.pdf
(10 pages)
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Rev. 1.04
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
10
10
10
10
10
40
30
20
10
DS
=f(T
0
4
3
2
1
0
-60
); V
0
j
); I
GS
D
-20
=0 V; f =1 MHz
=45 A; V
20
20
98 %
Crss
Coss
Ciss
GS
V
=10 V
T
j
DS
60
40
[°C]
typ
[V]
100
60
140
180
page 6
80
10 Typ. gate threshold voltage
V
parameter: I
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
1000
100
3.5
2.5
1.5
0.5
10
=f(T
SD
4
3
2
1
0
1
-60
)
0
j
); V
D
j
GS
-20
=V
0.5
DS
20
42 µA
150 °C
V
T
SD
j
60
[°C]
1
25 °C, 98%
420 µA
[V]
BSC196N10NS G
25 °C
100
150 °C, 98%
1.5
140
2008-05-08
180
2