bsc029n025s Infineon Technologies Corporation, bsc029n025s Datasheet
bsc029n025s
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bsc029n025s Summary of contents
Page 1
... /dt di /dt =200 A/µs, T =150 °C j,max =25 °C tot C T =25 ° =45 K/W thJA stg page 1 BSC029N025S 2.9 m 100 A PG-TDSON-8 Value Unit 100 200 680 mJ 6 kV/µs ± 2.8 -55 ... 150 °C 55/150/56 2006-05-10 ...
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... GSS =4 =50 A DS( |>2 DS(on)max = (one layer, 70 µm thick) copper area for drain page 2 BSC029N025S G Values Unit min. typ. max 1.6 K 1.2 1 0.1 1 µ 100 - 10 100 ...
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... V oss =25 ° S,pulse = =25 ° = /dt =400 A/µs F page 3 BSC029N025S G Values Unit min. typ. max. - 3830 5090 pF - 1460 1940 - 170 255 - 7 ...
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... C 4 Max. transient thermal impedance Z =f(t thJC p parameter µ 100 µ [V] DS page 4 BSC029N025S G _10 120 T [° 0.5 0.2 0.1 0.05 0.02 0.01 single pulse - [s] p 160 ...
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... 3 Typ. forward transconductance g =f 150 120 ° [V] GS page 5 BSC029N025S =25 ° 3.2 V 3 [A] D =25 ° [ 4 100 75 2006-05-10 ...
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... Forward characteristics of reverse diode I =f parameter Crss [V] DS page 6 BSC029N025S 900 µA 90 µA - 140 T [° 150 °C, 98% 25 °C 150 °C 25 °C, 98% 0 0.5 1 1.5 [ 190 ...
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... AV 16 Gate charge waveforms s(th) Q g(th) 90 140 190 [°C] j page 7 BSC029N025S =25 A pulsed gate [nC] gate ate ...
Page 8
... Package Outline : Outline Footprint Dimensions in mm Rev. 0.94 P-TDSON-8 page 8 BSC029N025S G 2006-05-10 ...
Page 9
... Package Outline P-TDSON-8: Tape Dimensions in mm Rev. 0.94 page 9 BSC029N025S G 2006-05-10 ...
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... Rev. 0.94 ° page 10 BSC029N025S G 2006-05-10 ...