bsc029n025s Infineon Technologies Corporation, bsc029n025s Datasheet - Page 7

• Manufacturer Part Number: bsc029n025s
• Description: Optimos 2 Power Transistor Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev. 0.94
13 Avalanche characteristics
I
parameter: T
15 Drain-source breakdown voltage
V
AS
BR(DSS)
=f(t
27.5
24.5
21.5
100
29
26
23
20
10
AV
1
-60
=f(T
); R
1
j
GS
); I
j(start)
=25
D
-10
=1 mA
10
40
t
T
AV
j
[°C]
[µs]
125 °C
90
100
100 °C
140
25 °C
1000
190
page 7
14 Typ. gate charge
V
parameter: V
16 Gate charge waveforms
GS
=f(Q
Q
V
12
10
V
8
6
4
2
0
g(th)
g s(th)
GS
0
gate
); I
DD
Q
D
=25 A pulsed
g s
20
Q
Q
gate
g
Q
sw
[nC]
Q
g d
BSC029N025S G
40
6 V
Q
24 V
15 V
g ate
2006-05-10
60