bsc042ne7ns3g Infineon Technologies Corporation, bsc042ne7ns3g Datasheet - Page 2

• Manufacturer Part Number: bsc042ne7ns3g
• Description: Optimos Power Transistor Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev. 2.0
Maximum ratings, at T
Parameter
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Parameter
Thermal characteristics
Thermal resistance, junction - case
Device on PCB
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
j
=25 °C, unless otherwise specified
j
=25 °C, unless otherwise specified
Symbol Conditions
Symbol Conditions
P
T
R
R
V
V
I
I
R
R
g
DSS
GSS
fs
j
tot
(BR)DSS
GS(th)
, T
thJC
thJA
DS(on)
G
stg
T
T
R
top
minimal footprint
6 cm
V
V
V
T
V
T
V
V
|V
I
D
page 2
C
A
j
j
GS
DS
DS
DS
GS
GS
thJA
=25 °C
=125 °C
=50 A
DS
=25 °C,
=25 °C
=V
=75 V, V
=75 V, V
=0 V, I
=20 V, V
=10 V, I
|>2|I
2
=50 K/W
cooling area
GS
, I
D
|R
D
D
=1 mA
D
=91 µA
GS
GS
DS
DS(on)max
=50 A
2)
=0 V,
=0 V,
=0 V
2)
,
min.
2.3
75
44
-
-
-
-
-
-
-
-
-55 ... 150
55/150/56
Values
Value
125
typ.
2.5
3.1
0.1
3.7
2.2
10
10
89
-
-
-
-
BSC042NE7NS3 G
max.
100
100
3.8
4.2
18
62
50
1
1
-
-
-
Unit
W
°C
Unit
K/W
V
µA
nA
mΩ
Ω
S
2009-05-20