bsc042ne7ns3g Infineon Technologies Corporation, bsc042ne7ns3g Datasheet - Page 4

• Manufacturer Part Number: bsc042ne7ns3g
• Description: Optimos Power Transistor Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev. 2.0
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
=f(V
=f(T
10
10
10
10
10
150
125
100
DS
75
50
25
-1
3
2
1
0
0
C
10
); T
)
0
-1
C
p
=25 °C; D =0
25
limited by on-state
resistance
50
10
0
75
V
T
DS
C
[°C]
[V]
100
10
125
1
100 µs
1 ms
150
10 µs
10 ms
DC
1 µs
175
10
page 4
2
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJC
=f(T
0.01
=f(t
0.1
10
120
100
C
1
80
60
40
20
10
); V
0
p
0
)
-6
0
0.5
0.05
0.01
0.1
0.02
0.2
GS
single pulse
≥10 V
10
25
p
0
-5
/T
50
10
0
-4
75
T
t
10
p
C
0
[s]
[°C]
-3
BSC042NE7NS3 G
100
10
0
-2
125
10
150
0
-1
2009-05-20
175
10
1
0