sup60n10-18p Vishay, sup60n10-18p Datasheet - Page 4

• Manufacturer Part Number: sup60n10-18p
• Description: N-channel 100-v D-s Mosfet
• Manufacturer: Vishay

SUP60N10-18P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.10
0.08
0.06
0.04
0.02
0.00
130
125
120
115
110
105
100
2.5
2.0
1.5
1.0
0.5
95
- 50
- 50
4
On-Resistance vs. Junction Temperature
I
D
I
On-Resistance vs. Junction Temperature
I
= 15 A
D
- 25
On-Resistance vs. Gate-to-Source Voltage
D
- 25
= 15 A
= 1 mA
5
V
0
0
T
GS
T
J
J
- Junction Temperature (°C)
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
25
25
6
50
50
7
75
75
100
100
8
T
125
125
V
J
T
GS
V
J
= 150 °C
GS
= 25 °C
9
= 10 V
150
150
= 8 V
175
175
10
0.001
0.01
- 0.3
- 0.8
- 1.3
- 1.8
- 2.3
100
100
0.1
0.7
0.2
10
10
1
1
10
- 50
0.0
-5
T
J
- 25
= 150 °C
Source-Drain Diode Forward Voltage
0.2
10
Avalanche Current vs. Time
V
-4
0
SD
- Source-to-Drain Voltage (V)
T
0.4
Threshold Voltage
25
T
J
J
= 150 °C
T
- Temperature (°C)
10
J
= 25 °C
-3
50
t
AV
0.6
(s)
S09-1096-Rev. A, 15-Jun-09
75
10
Document Number: 65003
I
-2
D
0.8
100
= 250 µA
125
T
10
J
1.0
I
-1
= 25 °C
D
= 5 mA
150
1.2
175
1