si7451dp Vishay, si7451dp Datasheet

no-image

si7451dp

Manufacturer Part Number
si7451dp
Description
P-channel 30-v D-s Mosfet
Manufacturer
Vishay
Datasheet
Notes
a.
Document Number: 71942
S-21791—Rev. B, 07-Oct-02
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
DS
-30
(V)
8
6.15 mm
D
7
D
0.005 @ V
J
a
6
= 150_C)
a
D
PowerPAKt SO-8
r
Parameter
Parameter
DS(on)
Bottom View
5
_
D
GS
a
a
(W)
= -10 V
P-Channel 30-V (D-S) MOSFET
1
S
a
2
S
3
S
5.15 mm
4
A
G
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
t v 10 sec
T
T
T
T
I
New Product
A
A
A
A
D
-25
= 25_C
= 70_C
= 25_C
= 70_C
(A)
Symbol
Symbol
T
R
R
J
V
V
I
P
, T
thJC
DM
thJA
I
I
GS
DS
D
S
D
G
stg
P-Channel MOSFET
FEATURES
D TrenchFETr Power MOSFET
D New Low Thermal Resistance PowerPAKt
APPLICATIONS
D Battery and Load Switching
Package with Low 1.07-mm Profile
- Notebook Computers
- Notebook Battery Packs
S
D
10 secs
Typical
-4.5
-25
- 20
5.4
3.4
1.0
18
50
-55 to 150
"25
-30
-60
Steady State
Maximum
Vishay Siliconix
-1.6
-15
-12
1.9
1.2
1.5
23
65
Si7451DP
www.vishay.com
Unit
Unit
_C/W
_C
C/W
W
V
A
1

Related parts for si7451dp

si7451dp Summary of contents

Page 1

... stg Symbol sec R thJA Steady State Steady State R thJC Si7451DP Vishay Siliconix FEATURES D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile APPLICATIONS D Battery and Load Switching - Notebook Computers - Notebook Battery Packs S D P-Channel MOSFET ...

Page 2

... Si7451DP Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...

Page 3

... Document Number: 71942 S-21791—Rev. B, 07-Oct-02 New Product 10000 8000 6000 4000 2000 110 0.020 0.016 0.012 0.008 T = 25_C J 0.004 0.000 0.8 1.0 1.2 Si7451DP Vishay Siliconix Capacitance C iss C oss C rss Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1 ...

Page 4

... Si7451DP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.8 0.6 = 250 0.4 0.2 0.0 -0.2 -0.4 -50 - Temperature (_C) J Limited by r DS(on) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 New Product 200 160 120 100 125 ...

Page 5

... TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0.05 0.02 0. Document Number: 71942 S-21791—Rev. B, 07-Oct-02 New Product - Square Wave Pulse Duration (sec) Si7451DP Vishay Siliconix 1 10 www.vishay.com 5 ...

Page 6

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

Related keywords