si7451dp Vishay, si7451dp Datasheet - Page 3

• Manufacturer Part Number: si7451dp
• Description: P-channel 30-v D-s Mosfet
• Manufacturer: Vishay

Document Number: 71942
S-21791—Rev. B, 07-Oct-02
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.010
0.008
0.006
0.004
0.002
0.000
0.1
10
60
10
8
6
4
2
0
1
0.0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
= 25 A
0.2
On-Resistance vs. Drain Current
= 15 V
10
22
T
V
J
SD
Q
= 150_C
g
- Source-to-Drain Voltage (V)
I
0.4
D
- Total Gate Charge (nC)
V
- Drain Current (A)
GS
Gate Charge
20
44
= 10 V
0.6
30
66
0.8
T
J
= 25_C
40
88
1.0
110
1.2
50
New Product
10000
0.020
0.016
0.012
0.008
0.004
0.000
8000
6000
4000
2000
1.6
1.4
1.2
1.0
0.8
0.6
0
-50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
C
V
I
-25
D
rss
GS
= 25 A
= 10 V
2
6
T
V
V
0
J
GS
DS
- Junction Temperature (_C)
C
oss
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
25
Capacitance
12
4
Vishay Siliconix
50
I
D
= 25 A
18
6
75
Si7451DP
C
iss
100
24
www.vishay.com
8
125
150
10
30
3