si7448dp-t1 Vishay, si7448dp-t1 Datasheet

no-image

si7448dp-t1

Manufacturer Part Number
si7448dp-t1
Description
N-channel 20-v D-s Fast Switching Mosfet
Manufacturer
Vishay
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
si7448dp-t1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
42 825
Part Number:
si7448dp-t1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
si7448dp-t1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes
a.
Document Number: 71635
S-31728—Rev. B, 18-Aug-03
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
i
DS
20
20
(V)
J
8
ti
6.15 mm
D
Ordering Information: Si7448DP-T1
t A bi
7
D
N-Channel 20-V (D-S) Fast Switching MOSFET
6
D
J
J
0.0065 @ V
a
a
PowerPAK SO-8
0.009 @ V
= 150_C)
= 150_C)
t
Bottom View
a
a
5
Parameter
Parameter
D
r
DS(on)
a
a
GS
GS
1
S
(W)
= 2.5 V
= 4.5 V
2
S
a
3
S
5.15 mm
4
G
A
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
T
T
T
T
t v 10 sec
A
A
A
A
I
= 25_C
= 70_C
= 25_C
= 70_C
D
22
19
(A)
Symbol
Symbol
T
R
R
R
V
V
J
I
P
P
, T
DM
thJC
I
I
I
thJA
DS
GS
D
D
S
D
D
stg
G
FEATURES
D TrenchFETr Power MOSFET
D New Low Thermal Resistance PowerPAKr
D 100% R
APPLICATIONS
D Synchronous Rectifier - Low Output Voltage
D Portable Computer Battery Selection or
N-Channel MOSFET
Package with Low 1.07-mm Profile
Protection
10 secs
Typical
17.6
4.3
5.2
3.3
1.5
22
19
52
D
S
g
Tested
-55 to 150
"12
20
50
Steady State
Maximum
Vishay Siliconix
13.4
10.7
1.6
1.9
1.2
1.8
24
65
Si7448DP
www.vishay.com
Unit
Unit
_C/W
C/W
_C
W
W
V
V
A
A
1

Related parts for si7448dp-t1

si7448dp-t1 Summary of contents

Page 1

... PowerPAK SO Bottom View Ordering Information: Si7448DP-T1 ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current Continuous Source Current (Diode Conduction Maximum Power Dissipation ...

Page 2

... Si7448DP Vishay Siliconix MOSFET SPECIFICATIONS (T Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current NO TAG On-State Drain Current NO TAG NO TAG Drain-Source On-State Resistance Drain-Source On-State Resistance NO TAG Forward Transconductance NO TAG Diode Forward Voltage ...

Page 3

... T = 150_C 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Document Number: 71635 S-31728—Rev. B, 18-Aug- 25_C J 0.8 1.0 1.2 Si7448DP Vishay Siliconix Capacitance 7000 6000 C iss 5000 4000 3000 C oss 2000 C rss 1000 Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1 ...

Page 4

... Si7448DP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.6 0 250 mA D 0.2 -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -50 - Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse ...

Related keywords