si7448dp-t1 Vishay, si7448dp-t1 Datasheet - Page 2

• Manufacturer Part Number: si7448dp-t1
• Description: N-channel 20-v D-s Fast Switching Mosfet
• Manufacturer: Vishay

Si7448DP
Vishay Siliconix
Notes
a.
b.
www.vishay.com
2
MOSFET SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate-Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
50
40
30
20
10
0
0
NO TAG
Parameter
V
GS
V
1
NO TAG
NO TAG
DS
= 4.5 thru 2.5 V
Output Characteristics
NO TAG
- Drain-to-Source Voltage (V)
2
NO TAG
NO TAG
2 V
3
Symbol
J
V
r
r
I
DS(on)
DS(on)
t
t
I
I
I
GS(th)
D(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
DSS
Q
= 25_C UNLESS OTHERWISE NOTED)
g
R
t
t
SD
t
rr
fs
gs
gd
r
f
g
g
4
1.5 V
5
V
V
I
DS
D
DS
^ 1 A, V
= 10 V, V
V
I
= 16 V, V
V
V
F
V
V
V
V
V
V
DS
DS
DS
Test Condition
GS
= 3 A, di/dt = 100 A/ms
DS
DD
DD
GS
DS
I
S
= 0 V, V
w 5 V, V
= V
= 3 A, V
= 4.5 V, I
= 16 V, V
= 10 V, R
= 10 V, R
= 2.5 V, I
= 15 V, I
GEN
GS
GS
GS
, I
= 10 V, R
= 4.5 V, I
GS
= 0 V, T
D
GS
GS
D
GS
D
= 250 mA
L
L
D
= "12 V
= 22 A
= 0 V
= 19 A
= 10 W
= 10 W
= 4.5 V
= 22 A
= 0 V
J
D
G
= 85_C
50
40
30
20
10
= 21 A
= 6 W
0
0.0
0.5
V
GS
Transfer Characteristics
- Gate-to-Source Voltage (V)
Min
0.6
0.2
50
T
25_C
C
1.0
= 125_C
0.0054
0.0075
Typ
125
0.8
8.5
0.9
90
38
22
22
60
60
S-31728—Rev. B, 18-Aug-03
8
Document Number: 71635
1.5
0.0065
"100
Max
0.009
190
1.2
1.1
20
50
35
35
90
90
1
-55_C
2.0
Unit
nA
mA
mA
nC
ns
W
W
W
V
A
S
V
2.5