ssm6j412tu TOSHIBA Semiconductor CORPORATION, ssm6j412tu Datasheet
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ssm6j412tu
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ssm6j412tu Summary of contents
Page 1
... W D °C T 150 ch °C T −55 to 150 stg and the significant change etc.) are within the 2 ) Equivalent Circuit SSM6J412TU 2.1±0.1 1.7±0 1,2,5,6: Drain 3: Gate 4: Source UF6 JEDEC ― in JEITA ― TOSHIBA 2-2T1D Weight : 7.0mg ( typ. ) 2010-02-24 Unit ...
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... V IN OUT −2 OUT V DS (ON requires a higher voltage than V GS (on) GS (off) vary depending on board material, board area, board thickness D 2 SSM6J412TU Min Typ. Max ⎯ ⎯ -20 ⎯ ⎯ (Note 4) -15 ⎯ ⎯ -1 ⎯ ⎯ ±1 ⎯ -0.3 -1.0 ⎯ ...
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... Gate–source voltage V 140 Common Source Pulse test 120 100 - −50 -10.0 Ambient temperature Ta (°C) 3 SSM6J412TU I – −25 °C 25 °C -1.0 -1.5 -2.0 ( – (ON =-2.5A Common Source Pulse test Ta = 100 °C 25 °C − 25 °C -2 ...
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... C oss C rss - -100 (V) 100 Common Source °C Pluse test 10 1 0.1 0.01 0.001 0 -10 4 SSM6J412TU |Y | – -0.1 -1 -10 -100 Drain current I (A) D Dynamic Input Characteristic - -16 V Common Source -4 ° Total Gate Charge Qg (nC) I – ...
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... Cu Pad: 645 mm 1 0.001 0.01 0 Pulse Width t (s) w 1.25 DC 1.0 0.75 0.5 0. 100 1000 -40 -20 Ambient temperature Ta (°C) 5 SSM6J412TU P – Mounted on FR4 board (25.4mm × 25.4mm × 1.6mm , 2 Cu Pad : 645 100 120 140 160 2010-02-24 ...
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... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 6 SSM6J412TU 2010-02-24 ...