ssm6j412tu TOSHIBA Semiconductor CORPORATION, ssm6j412tu Datasheet

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ssm6j412tu

Manufacturer Part Number
ssm6j412tu
Description
Toshiba Field-effect Transistor Silicon P-channel Mos Type U-mos
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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○ Power Management Switch Applications
Absolute Maximum Ratings
Marking (Top View)
1.5-V drive
Low ON-resistance: R
Drain-source voltage
Gate-source voltage
Drain current
Power dissipation
Channel temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high
Note 1: Pw ≤ 10μs, Duty. ≤ 1%
Note 2: Mounted on a FR4 board.
6
1
KPH
temperature/current/voltage
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
(25.4 mm × 25.4 mm × 1.6 mm , Cu Pad: 645 mm
2
5
Characteristic
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ)
4
3
temperature/current/voltage,
R
R
R
DS(ON)
DS(ON)
DS(ON)
DS(ON)
DC
Pulse
= 99.6 mΩ (max) (@V
= 67.8 mΩ (max) (@V
= 51.4 mΩ (max) (@V
= 42.7 mΩ (max) (@V
SSM6J412TU
I
and
(Ta = 25°C)
DP
P
Symbol
D
V
V
I
(Note 1)
T
T
GSS
D
DSS
stg
(Note 2)
ch
Equivalent Circuit
the
6
1
significant
etc.)
GS
GS
GS
GS
−55 to 150
Rating
-16.0
-4.0
150
-20
± 8
= -1.5 V)
= -1.8 V)
= -2.5 V)
= -4.5 V)
5
are
1
2
1
2
)
change
within
4
3
Unit
°C
°C
W
V
V
A
the
in
Weight : 7.0mg ( typ. )
JEDEC
JEITA
TOSHIBA
UF6
1
2
3
1,2,5,6: Drain
3:
4:
SSM6J412TU
2.1±0.1
1.7±0.1
2-2T1D
Gate
Source
2010-02-24
Unit: mm
6
5
4

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ssm6j412tu Summary of contents

Page 1

... W D °C T 150 ch °C T −55 to 150 stg and the significant change etc.) are within the 2 ) Equivalent Circuit SSM6J412TU 2.1±0.1 1.7±0 1,2,5,6: Drain 3: Gate 4: Source UF6 JEDEC ― in JEITA ― TOSHIBA 2-2T1D Weight : 7.0mg ( typ. ) 2010-02-24 Unit ...

Page 2

... V IN OUT −2 OUT V DS (ON requires a higher voltage than V GS (on) GS (off) vary depending on board material, board area, board thickness D 2 SSM6J412TU Min Typ. Max ⎯ ⎯ -20 ⎯ ⎯ (Note 4) -15 ⎯ ⎯ -1 ⎯ ⎯ ±1 ⎯ -0.3 -1.0 ⎯ ...

Page 3

... Gate–source voltage V 140 Common Source Pulse test 120 100 - −50 -10.0 Ambient temperature Ta (°C) 3 SSM6J412TU I – −25 °C 25 °C -1.0 -1.5 -2.0 ( – (ON =-2.5A Common Source Pulse test Ta = 100 °C 25 °C − 25 °C -2 ...

Page 4

... C oss C rss - -100 (V) 100 Common Source °C Pluse test 10 1 0.1 0.01 0.001 0 -10 4 SSM6J412TU |Y | – -0.1 -1 -10 -100 Drain current I (A) D Dynamic Input Characteristic - -16 V Common Source -4 ° Total Gate Charge Qg (nC) I – ...

Page 5

... Cu Pad: 645 mm 1 0.001 0.01 0 Pulse Width t (s) w 1.25 DC 1.0 0.75 0.5 0. 100 1000 -40 -20 Ambient temperature Ta (°C) 5 SSM6J412TU P – Mounted on FR4 board (25.4mm × 25.4mm × 1.6mm , 2 Cu Pad : 645 100 120 140 160 2010-02-24 ...

Page 6

... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 6 SSM6J412TU 2010-02-24 ...

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