ssm6j410tu TOSHIBA Semiconductor CORPORATION, ssm6j410tu Datasheet
ssm6j410tu
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ssm6j410tu Summary of contents
Page 1
... DP P (Note2) 500 10s 1000 T 150 ch −55 to 150 T stg and the significant change Equivalent Circuit SSM6J410TU V V 1,2,5,6 : Drain Gate 4 : Source °C °C JEDEC ― JEITA ― in TOSHIBA 2-2T1D Weight: 7.0mg (typ (top view) 2010-01-19 Unit: mm ...
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... Ta = 25°C Notice on Usage Let V be the voltage applied between gate and source that causes the drain current (I th SSM6J410TU). Then, for normal switching operation This relationship can be expressed as: V th. Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge ...
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... Gate-source voltage V 1000 Common Source Ta = 25°C Pulse Test 800 600 400 Ta = 100 °C -4.0 V 200 -10 V − 25 °C 0 -20 0 (V) -2.0 -1.0 0 −50 150 3 SSM6J410TU I – 100 °C 25 °C − 25 °C -1.0 -2.0 -3.0 -4.0 ( – (ON Drain current I ( – ...
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... Drain-source voltage V 1000 t off C iss 100 oss C rss -100 -0.01 ( SSM6J410TU I – ° =100 °C −25 °C 0.5 1.0 1.5 ( – Common Source - -4 ° Ω ...
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... Cu Pad: 645 mm 100 10 1 0.001 0.01 0 Pulse width t (s) w 1000 2 ) 800 600 DC 400 200 0 -40 -20 100 1000 Ambient temperature T 5 SSM6J410TU P – Mounted on FR4 board (25.4mm × 25.4mm × 1.6 mm Pad : 645 100 120 140 160 (°C) a 2010-01-19 ...
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... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 6 SSM6J410TU 2010-01-19 ...