ssm6p47nu TOSHIBA Semiconductor CORPORATION, ssm6p47nu Datasheet
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ssm6p47nu
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ssm6p47nu Summary of contents
Page 1
... GSS −4 −8.0 I (Note < 10s 2 °C T 150 ch −55 to 125 °C T stg 2 ) Equivalent Circuit(Top View SSM6P47NU Unit: mm 2.0 0.1 ± 0~0.05 0.13 *BOTTOM VIEW 0.65 0.65 0. 0.3 0.075 ± 0. 0.65 0.075 0.65 0.075 ± ± 0. ...
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... V DD Notice on Usage Let V be the voltage applied between gate and source that causes the drain current (I th SSM6P47NU). Then, for normal switching operation This relationship can be expressed as: V th. Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge ...
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... Ta = 25°C Pulse Test Pulse Test 200 Ta = 100 °C 100 - ° (V) GS -1.0 -1 -2.5 V -0.5 0 −50 100 150 3 SSM6P47NU I – Common Source Pulse Test Ta = 100 °C -25 °C 25 °C -1.0 Gate–source voltage V ( – (ON) D -1 ...
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... Total gate charge Qg (nC) 10 0.1 0.01 0.001 -1 -10 (A) D 10000 1000 C iss 100 C oss 10 C rss -10 -100 ( SSM6P47NU I – Common Source Pulse Test -25 ° =100 °C 25 °C 0 0.5 1.0 Drain–source voltage V ( – I ...
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... Cu Pad : 645 mm b: Mounted on FR4 board 1200 (25.4mm × 25.4mm × 1.6mm , Cu Pad : 2.13mm 1000 a a 800 600 400 b 2 200 ) 100 1000 -40 -20 0 Ambient temperature Ta (°C) 5 SSM6P47NU P – 100 120 140 160 2011-03-10 ...
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... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 6 SSM6P47NU 2011-03-10 ...