ssm6l12tu TOSHIBA Semiconductor CORPORATION, ssm6l12tu Datasheet - Page 2

• Manufacturer Part Number: ssm6l12tu
• Description: Toshiba Field Effect Transistor Silicon P/n Channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Q1 Electrical Characteristics
Note2:
Switching Time Test Circuit
Precaution
this product. For normal switching operation, V
voltage than V
(The relationship can be established as follows: V
V
Please take this into consideration when using the device.
Gate leakage current
Drain-Source breakdown voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-Source on-resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
(a) Test Circuit
th
can be expressed as the voltage between gate and source when the low operating current value is I
2.5 V
Pulse test
0
Characteristics
V
R
D.U. < = 1%
V
Common Source
Ta = 25°C
th.
DD
IN
G
10 μs
: t
= 4.7 Ω
= 10 V
r
, t
f
Turn-on time
Turn-off time
< 5 ns
IN
V
V
R
V
(Ta = 25°C)
Symbol
(BR) DSS
(BR) DSX
DD
DS (ON)
⏐Y
OUT
I
I
C
C
C
GSS
DSS
V
t
t
oss
on
off
rss
iss
th
fs
GS (on)
⏐
GS (off)
V
I
I
V
V
V
I
I
V
V
V
V
V
D
D
D
D
(c) V
requires a higher voltage than V
GS
DS
DS
DS
DS
DS
DS
DD
GS
(b) V
= 1 mA, V
= 1 mA, V
= 0.50 A, V
= 0.25 A, V
< V
= 30 V, V
= 3 V, I
= 3 V, I
= 10 V, V
= 10 V, V
= 10 V, V
= ± 1 2 V, V
= 10 V, I
= 0~2.5 V, R
2
OUT
th
IN
< V
D
D
Test Condition
GS
GS
D
GS
GS
GS
= 0.1 mA
= 0.25 A
GS
GS
GS
GS (on)
DS
= 0.25 A,
= 0
= −12 V
= 4.5 V
= 2.5 V
G
= 0
= 0, f = 1 MHz
= 0, f = 1 MHz
= 0, f = 1 MHz
= 0
= 4.7 Ω
)
V
DS (ON)
2.5 V
V
0 V
DD
(Note2)
(Note2)
(Note2)
th
and V
Min
0.5
1.0
30
18
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
t
10%
on
GS (off)
t
r
Typ.
10%
90%
120
140
245
2.0
33
41
15
⎯
⎯
⎯
⎯
⎯
9
SSM6L12TU
requires a lower
90%
t
2007-11-01
D
off
Max
145
180
1.1
t
=100 μA for
±1
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
f
1
Unit
mΩ
μA
μA
pF
pF
pF
ns
V
V
S