ssm6l14fe TOSHIBA Semiconductor CORPORATION, ssm6l14fe Datasheet - Page 7

• Manufacturer Part Number: ssm6l14fe
• Description: Toshiba Field-effect Transistor Silicon N / P Channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Q2 (P-ch MOSFET)
10000
1000
1000
100
500
300
100
10
50
30
10
-0.1
-8
-6
-4
-2
-1
0
0
Common Source
V DS = -3 V
Ta = 25°C
Pulse Test
Common Source
Ta = 25°C
f = 1 MHz
V GS = 0 V
Common Source
I D = -0.72 A
Ta = 25°C
Drain-Source voltage V
Total Gate Charge Qg (nC)
Dynamic Input Characteristic
-10
V DD = - 10 V
Drain current I
Capacitance – V
-1
1
|Y
fs
-100
| – I
V DD = - 16 V
D
D
-10
DS
(mA)
DS
-1000
2
(V)
C oss
C rss
C iss
-10000
-100
3
7
10000
10000
1000
1000
100
100
0.1
10
10
1
1
0
-1
t on
G
t r
t off
t f
Common Source
V GS = 0 V
Pulse Test
0.2
S
Drain-source voltage V
D
Ta =100 °C
-10
I
DR
Drain current I
0.4
I
DR
t – I
-100
– V
0.6
D
DS
−25 °C
D
0.8
DS
(mA)
Common Source
V DD = -10 V
V GS = 0 to -2.5 V
Ta = 25 °C
R G = 50Ω
25 °C
SSM6L14FE
-1000
(V)
1.0
2010-03-25
-10000
1.2